Scanning tunneling microscopy evidence of a special bonding of Cu adatoms on Si(111)-root 3 x root 3-Ag surface - Direct observation of surface-stateelectron migration

Citation
X. Tong et al., Scanning tunneling microscopy evidence of a special bonding of Cu adatoms on Si(111)-root 3 x root 3-Ag surface - Direct observation of surface-stateelectron migration, SURF SCI, 446(1-2), 2000, pp. L120-L126
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
446
Issue
1-2
Year of publication
2000
Pages
L120 - L126
Database
ISI
SICI code
0039-6028(20000201)446:1-2<L120:STMEOA>2.0.ZU;2-D
Abstract
STM observations provide direct evidence that the S-1 surface states around the Cu adatoms on the root 3 x root 3-Ag substrate are donated by excess e lectrons from Cu adatoms, resulting in metallic surface bonds of Cu adatoms on the root 3 x root 3-Ag surface. These donated electrons can easily migr ate along the SI surface states together with the Cu adatoms: this can be e xplained by the delocalized character of the S-1 surface state and the Coul omb attraction between the donated electrons and the adatoms. (C) 2000 Else vier Science B.V. All lights reserved.