Epitaxial growth of ultrathin Ag films on Al(111)

Citation
A. Losch et H. Niehus, Epitaxial growth of ultrathin Ag films on Al(111), SURF SCI, 446(1-2), 2000, pp. 153-160
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
446
Issue
1-2
Year of publication
2000
Pages
153 - 160
Database
ISI
SICI code
0039-6028(20000201)446:1-2<153:EGOUAF>2.0.ZU;2-W
Abstract
The structure and growth mode of Ag evaporated on Al(111) at room temperatu re were investigated by ion scattering. Within the limits of our experiment al resolution (0.2 Angstrom), the positions of the adsorbed Ag atoms were f ound to coincide laterally and vertically with the positions of the extende d Al bulk lattice. The fee stacking layer sequence of the substrate is kept by the adsorbing Ag at least up to the second layer. Strong indications fo r island formation (three-dimensional growth mode) have been found. (C) 200 0 Elsevier Science B.V. All rights reserved.