Van der waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

Authors
Rudolph, R Tomm, Y Pettenkofer, C Klein, A Jaegermann, W
Citation
R. Rudolph et al., Van der waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110), APPL PHYS L, 76(9), 2000, pp. 1101-1103
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
9
Year of publication
2000
Pages
1101 - 1103
Database
ISI
SICI code
0003-6951(20000228)76:9<1101:VDWXOG>2.0.ZU;2-0
Abstract
The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces w as investigated with photoemission and low-energy electron diffraction (LEE D). GaSe films grow with their c axis perpendicular to the GaAs(110) surfac e. LEED patterns after initial film growth are a superposition of rectangul ar GaAs:Se spots and two hexagonal domains rotated by +/- 5 degrees with re spect to the GaAs [001] axis. At higher film thickness a hexagonal LEED pat tern with GaSe [120] parallel to GaAs [001] is obtained. (C) 2000 American Institute of Physics. [S0003-6951(00)00709-9].