Citation
L. Gonzalez et al., Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures, APPL PHYS L, 76(9), 2000, pp. 1104-1106
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
76
Issue
9
Year of publication
2000
Pages
1104 - 1106
Database
ISI
SICI code
0003-6951(20000228)76:9<1104:IOBSMO>2.0.ZU;2-S
Abstract
We have studied the influence of InP buffer-layer morphology in the formati
on of InAs nanostructures grown on InP(001) substrates by solid-source mole
cular-beam epitaxy. Our results demonstrate that when InP buffer layers are
grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like struct
ures are formed, whereas InP buffer layers grown by MBE produce quantum-wir
e-like structures. The optical properties of these corrugated structures ma
ke them potential candidates for their use in light-emitting devices at 1.5
5 mu m. (C) 2000 American Institute of Physics. [S0003-6951(00)00309-0].