Structural characterization and strain relaxation in porous GaN layers

Surface and subsurface structures of porous GaN prepared by anodizing epita xial GaN layers grown on SiC substrates are investigated by atomic-force mi croscopy. Comparison of the images of the porous GaN surfaces with those ta ken on planes cleft perpendicular to the surface shows that the pores are f ormed along the boundaries of columnar structures of the original GaN films . X-ray investigations show that the porous GaN has less residual stresses than the initial GaN epitaxial layers. Use of porous GaN as a buffer layer for growth of low-stress GaN is proposed. (C) 2000 American Institute of Ph ysics. [S0003-6951(00)01809-X].