Synthesis and optical properties of gallium arsenide nanowires

Gallium arsenide (GaAs) nanowires have been synthesized in bulk quantities and high purity by laser-assisted catalytic growth. Field-emission scanning electron microscopy and transmission electron microscopy investigations sh ow that the GaAs nanowires are produced in > 90% yield, are single crystals with [111] growth axes, and have diameters varying from three to tens of n anometers, and lengths extending to tens of micrometers. Photoluminescence (PL) measurements made on individual GaAs nanowires show large blueshifts i n the PL peak position compared to bulk GaAs, and are consistent with stron g quantum confinement. The implications of these results are discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)01509-6].