Multilayered gated lateral quantum dot devices

We describe a detailed device fabrication technique for the formation of a lateral quantum dot using a multilayered gated design. In our versatile sys tem, a quantum dot is electrostatically defined by a split gate and two ove rlaying finger gates which introduce entrance and exit barriers to the dot. Periodic and continuous conductance oscillations arising from Coulomb char ging effects are clearly observed in the transport properties at low temper atures. (C) 2000 American Institute of Physics. [S0003-6951(00)00609-4].