A determination of the InAs/GaAs band-offset energy is presented. Electroni
c-transport analysis, based on capacitance-voltage and deep-level transient
spectroscopy techniques, demonstrates high crystalline quality of our samp
le and yields a band-offset estimate of 0.69 eV, corresponding to a band-of
fset ratio of 70 divided by 30. The present results agree well with reporte
d theoretical values and allow the accurate modeling of electronic states i
n GaAs/AlGaAs heterostructures containing InAs ultrathin layers. (C) 2000 A
merican Institute of Physics. [S0003-6951(00)03509-9].