Visible photonic band gap engineering in silicon nitride waveguides

Authors
Netti, MC Charlton, MDB Parker, GJ Baumberg, JJ
Citation
Mc. Netti et al., Visible photonic band gap engineering in silicon nitride waveguides, APPL PHYS L, 76(8), 2000, pp. 991-993
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
8
Year of publication
2000
Pages
991 - 993
Database
ISI
SICI code
0003-6951(20000221)76:8<991:VPBGEI>2.0.ZU;2-S
Abstract
We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were perfor med using an ultrabroadband high-brightness white light laser continuum, ex tracting extinction ratios as low as 10(-4) in the gap regions. Angle-resol ved measurements show the perfect alignment of the gap around the Gamma-J d irection. (C) 2000 American Institute of Physics. [S0003-6951(00)02008-8].