Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

We investigate the electronic states in strained Ga0.62In0.38N0.015As0.985/ GaAs multiple- quantum-well structures using photoluminescence and (polariz ed) photoluminescence excitation measurements at low temperature. From a th eoretical fit to the experimental data, a type-I band alignment for the hea vy holes with a strained conduction-band offset ratio of about 80% is obtai ned, while the light holes show an approximately flat band alignment. Addit ionally, our results suggest an increased effective electron mass in GaInNA s, possibly due to the interaction of the conduction band with nitrogen-rel ated resonant states, an observation prospectively of benefit for GaInNAs-b ased diode lasers. (C) 2000 American Institute of Physics. [S0003-6951(00)0 4108-5].