The exchange bias effect in ferromagnetic/antiferromagnetic sandwich struct
ures is generally believed to be sensitive on the interface exchange intera
ction, the magnetization, and the thickness of the ferromagnetic layer. Als
o the interface structure plays a crucial role. We show that, by irradiatin
g samples with He ions, we can manipulate the exchange bias field in a cont
rolled manner. Depending on the dose (10(14)-10(17) ions/cm(2)) and the acc
eleration voltage (10-35 kV) of the ions, the shift of the hysteresis can b
e reduced or even fully suppressed. Potential applications of this effect f
or magnetic patterning on the nanoscale will be discussed. (C) 2000 America
n Institute of Physics. [S0003-6951(00)03608-1].