Suppression of exchange bias by ion irradiation

Citation
T. Mewes et al., Suppression of exchange bias by ion irradiation, APPL PHYS L, 76(8), 2000, pp. 1057-1059
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
8
Year of publication
2000
Pages
1057 - 1059
Database
ISI
SICI code
0003-6951(20000221)76:8<1057:SOEBBI>2.0.ZU;2-E
Abstract
The exchange bias effect in ferromagnetic/antiferromagnetic sandwich struct ures is generally believed to be sensitive on the interface exchange intera ction, the magnetization, and the thickness of the ferromagnetic layer. Als o the interface structure plays a crucial role. We show that, by irradiatin g samples with He ions, we can manipulate the exchange bias field in a cont rolled manner. Depending on the dose (10(14)-10(17) ions/cm(2)) and the acc eleration voltage (10-35 kV) of the ions, the shift of the hysteresis can b e reduced or even fully suppressed. Potential applications of this effect f or magnetic patterning on the nanoscale will be discussed. (C) 2000 America n Institute of Physics. [S0003-6951(00)03608-1].