Compositionally step-varied (Pb, Ca)TiO3 thin films with enhanced dielectric and ferroelectric properties

Citation
Dh. Bao et al., Compositionally step-varied (Pb, Ca)TiO3 thin films with enhanced dielectric and ferroelectric properties, APPL PHYS L, 76(8), 2000, pp. 1063-1065
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
8
Year of publication
2000
Pages
1063 - 1065
Database
ISI
SICI code
0003-6951(20000221)76:8<1063:CS(CTF>2.0.ZU;2-M
Abstract
Compositionally step-varied (Pb, Ca)TiO3 thin films were prepared on platin um-coated silicon substrates by a monoethanolamine-modified sol-gel techniq ue. The dielectric constant and dissipation factor were found to be 342 and 0.019, respectively, for thin films of 0.6 mu m in thickness annealed at 5 50 degrees C for 60 min. The remanent polarization and coercive field were 37.7 mu C/cm(2) and 60.4 kV/cm, respectively. The leakage current was 1.31x 10(-7) A/cm(2) at the voltage of 5 V. The compositionally step-varied (Pb, Ca)TiO3 thin films had enhanced dielectric and ferroelectric properties whi ch were suitable for various device applications. (C) 2000 American Institu te of Physics. [S0003-6951(00)03008-4].