DEVELOPMENT OF SUPER HIGH APERTURE (SUPER -HA) TFT-LCD PANEL

Authors
KATAOKA Y OGAMI H FUJIKAWA T NISHIKI H NAKATA Y YAMAMOTO A SHIMADA Y SHIMADA T SAKUHANA Y OKAMOTO M KATAYAMA M
Citation
Y. Kataoka et al., DEVELOPMENT OF SUPER HIGH APERTURE (SUPER -HA) TFT-LCD PANEL, Sharp giho, (67), 1997, pp. 41-44
Citations number
13
Categorie Soggetti
Instument & Instrumentation","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
Sharp giho → ACNP
ISSN journal
02850362
Issue
67
Year of publication
1997
Pages
41 - 44
Database
ISI
SICI code
0285-0362(1997):67<41:DOSHA(>2.0.ZU;2-1
Abstract
In order to develop TFT-LCDs with low power consumption and high brigh tness, it is very important to improve the aperture ratio so as to inc rease the light transmission efficiency of liquid crystal cell. We hav e developed a very high aperture ratio technology named 'Super-HA(High Aperture)', and have succeeded in developing TFT-LCDs with more than 80% aperture ratio. In the conventional 11.3-inch diagonal SVGA TFT-LC D, the distance between a pixel electrode and the next pixel electrode is 26 mu m. In the 'Super-HA' panels, the distance can be reduced to 8 mu m by using pixel electrodes on passivation structure. This paper describe the new key technologies of 'Super-HA' structure.