Property of hexafluoroacetylacetonateCu(I) (3,3-dimethyl-1-butene) as a liquid precursor for chemical vapor deposition of copper films

An organometallic precursor, hexafluoroacerylacetonate (hfac)Cu(I) (3,3-dim ethyl-1-butene) (DMB) was studied for metallorganic chemical vapor depositi on of copper thin films. It was found that at 40 degrees C, the vapor press ure was an order of magnitude higher (about 2 Torr) than (hfac)Cu vinyltrim ethylsilane, and films could be deposited at the substrate temperature of 1 00-280 degrees C with a substantially higher deposition rate. The copper fi lms contained no detectable impurities as measured by Auger electron spectr oscopy and had a resistivity of about 2.0 mu Omega cm in the deposition tem perature range of 150-250 degrees C. From the thermal analysis, (hfac)Cu(I) (DMB) is believed to be stable and no appreciable amount of precipitation was observed on holding the temperature at 65 degrees C for more than a mon th. (C) 2000 The Electrochemical Society. S1099-0062(99)08-070-2. All right s reserved.