Photoelectrochemical determination of the flatband potential of boron-doped diamond

Flatband potentials of boron-doped polycrystalline and single crystal chemi cal vapor deposition and high-temperature, high-pressure diamond electrodes were estimated by three photoelectrochemical methods (i) as the photocurre nt onset potential, (ii) from the dependence of photopotential on the light intensity, and (iii) by extrapolating the potential dependence of the phot ocurrent squared. The potentialities of these methods are discussed, as app lied to diamond electrodes. (C) 2000 The Electrochemical Society. S1099-006 2(99)10-052-X. All rights reserved.