High current, common-base GaN/AlGaN heterojunction bipolar transistors

Authors
Cao, XA Dang, GT Zhang, AP Ren, F Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Abernathy, CR Pearton, SJ
Citation
Xa. Cao et al., High current, common-base GaN/AlGaN heterojunction bipolar transistors, EL SOLID ST, 3(3), 2000, pp. 144-146
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
3
Issue
3
Year of publication
2000
Pages
144 - 146
Database
ISI
SICI code
1099-0062(200003)3:3<144:HCCGHB>2.0.ZU;2-6
Abstract
Current densities up to 2.55 kA cm(-2) at temperatures up to 250 degrees C were obtained in GaN/AlGaN heterojunction bipolar transistors gown by molec ular beam epitaxy. At 25 degrees C, the power density was 20.4 kW cm(-2). R oom temperature de current gains of 15-20 were obtained. In the common-base mode of operation. I-C was approximately equal to I-E, indicating high emi tter injection efficiency. (C) 2000 The Electrochemical Society. S1099-0062 (99)10-081-6. All rights reserved.