Defect depth profile in CdTe : Cl by positron annihilation

Depth resolved defect profiles have been obtained from CdTe:Cl samples usin g both positron lifetime spectroscopy and Doppler-broadening of annihilatio n radiation spectra. The dominant defect species was identified as the chlo rine- vacancy complex or A center The defect concentration in the bulk was found to be 2.5 x 10(16) cm(-3), with a much higher near-surface concentrat ion, in agreement with chlorine concentration profiles obtained using the r adiotracer sectioning technique. It is proposed that the Cd vacancy is invo lved in the diffusion of CI atom. (C) 2000 The Electrochemical Society. S10 99-0062(99)10-012-9. All rights reserved.