Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicides

The formation of Ni silicides has been successfully monitored by Raman spec troscopy Ni silicides formed at different annealing temperatures using rapi d thermal annealing were analyzed using Rutherford backscattering spectrosc opy and X-ray diffraction. Raman spectroscopy was further used to examine t hese samples. The results showed that Raman spectroscopy could accurately i dentify the phases of Ni silicides formed at various temperatures. These fi ndings were used to demonstrate the increased thermal stability of NiSi by the addition of Pt. This study demonstrates the applicability of Raman spec troscopy for monitoring the formation of NiSi, which was suggested to be th e future silicide for deep submicrometer integrated circuit processing. Ram an spectroscopy offers a unique tool for phase identification at localized areas and mapping characterization of Ni silicides with micrometer spatial resolution. (C) 2000 The Electrochemical Society. S1099-0062(99)10-031-2. A ll rights reserved.