Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

Authors
Xiong, Y Zhou, Y Zhu, ZH Lo, YH Ji, C Bashar, SA Allerman, AA Hargett, T Sieg, R Choquette, KD
Citation
Y. Xiong et al., Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates, IEEE PHOTON, 12(2), 2000, pp. 110-112
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
2
Year of publication
2000
Pages
110 - 112
Database
ISI
SICI code
1041-1135(200002)12:2<110:OGVSLO>2.0.ZU;2-#
Abstract
By employing a reactive low-temperature wafer bonding technique, we have de monstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VC SEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuo us-wave operation without a heat sink.