Low-threshold 1.3-mu m InGaAsN : Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

Authors
Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation
X. Yang et al., Low-threshold 1.3-mu m InGaAsN : Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy, IEEE PHOTON, 12(2), 2000, pp. 128-130
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
2
Year of publication
2000
Pages
128 - 130
Database
ISI
SICI code
1041-1135(200002)12:2<128:L1MI:S>2.0.ZU;2-B
Abstract
1.3-mu m InGaAsN: Sb-GaAs single-quantum-well laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A re cord low threshold of 1.02 kA/cm(2) and a slope efficiency of 0.12 W/A are obtained for broad-area laser diodes under pulsed operation at room tempera ture. A characteristic temperature of 64 K and a lasing wavelength temperat ure dependence of 0.38 mm/degrees C are reported.