Low-threshold current, high-efficiency 1.3-mu m wavelength aluminum-free InGaAsN-based quantum-well lasers

We demonstrate high-performance Al-free InGaAsN-GaAs-InGaP-based long-wavel ength quantum-well (QW) lasers grown on GaAs substrates by gas-source molec ular beam epitaxy using a RF plasma nitrogen source. Continuous wave (CW) o peration of InGaAsN-GaAs QW losers is demonstrated at lambda = 1.3 mu m at a threshold current density of only J(TH) = 1.32 kA/cm(2). These narrow rid ge (W = 8.5 mu m) lasers also exhibit an internal loss of only 3.1 cm(-1) a nd an internal efficiency of 60%, Also, a characteristic temperature of T-0 = 150 K from 10 degrees C to 60 degrees C was measured, representing a sig nificant improvement over conventional lambda = 1.3 mu m InGaAsP-InP lasers , Under pulsed operation, a record high maximum operating temperature of 12 5 degrees C and output powers greater than 300 mW (pulsed) and 120 mW (CW) were also achieved.