Improvement of kink and beam steering characteristics of 0.98-mu m GaInAs-GaInP high-power lasers utilizing channel ion implantation

Authors
Lee, JK Park, KH Jang, DH Cho, HS Nam, ES Pyun, KE Jeong, J
Citation
Jk. Lee et al., Improvement of kink and beam steering characteristics of 0.98-mu m GaInAs-GaInP high-power lasers utilizing channel ion implantation, IEEE PHOTON, 12(2), 2000, pp. 140-142
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
2
Year of publication
2000
Pages
140 - 142
Database
ISI
SICI code
1041-1135(200002)12:2<140:IOKABS>2.0.ZU;2-Z
Abstract
We demonstrate a kink and beam steering free operation of 0.98-mu m GaInAs- GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implanta tion. The ion-implanted regions along the both sides of the ridge effective ly suppressed the excitation of higher order lateral modes, which causes be am steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7- mu m ridge width, compared to 120-mW maximum power without the channel ion implantation.