Highly suppressed short-channel effects in ultrathin SOI n-MOSFET's

We have investigated short-channel effects of ultrathin (4-18-nm thick) sil icon-on-insulator (SOI) n-channel MOSFET's in the 40-135-nm gate length reg ime. It is experimentally and systematically found that the threshold volta ge (V-th) roll-off and subthreshold slope (S-slope) are highly suppressed a s the channel SOI thickness is reduced. The experimental 40-nm gate length, 4-nm thick ultrathin SOI n-MOSFET shows the S-slope of only 75 mV and the Delta V-th of only 0.07 V as compared to the value in the case of the long- gate length (135 nm) device, Based on these experimental results, the remar kable advantage of an ultrathin SOI channel in suppressing the short-channe l effects is confirmed for future MOS devices.