Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices
Cj. Wordelman et U. Ravaioli, Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices, IEEE DEVICE, 47(2), 2000, pp. 410-416
A particle-particle-particle-mesh ((PM)-M-3) algorithm is integrated with t
he ensemble Monte Carlo (EMC) method for the treatment of carrier-impurity
(c-i) and carrier-carrier (c-c) effects in semiconductor device simulation,
Ionized impurities and charge carriers are treated granularly as opposed t
o the normal continuum methods and c-i and c-c interactions are calculated
in three dimensions. The combined (PM)-M-3-EMC method follows the approach
of Hockney, but is modified to treat nonuniform rectilinear meshes with arb
itrary boundary conditions. Bulk mobility results are obtained for a three-
dimensional (3-D) resistor and are compared with previously reported experi
mental and numerical results.