A new bipolar transistor model called VBIC has recently been developed and
is likely to replace the Gummel-Poon model as the new industry standard bip
olar transistor model. This paper focuses on the comparison of the VBIC and
Gummel-Poon models-under the de operations. The extraction and optimizatio
n procedure coded in S+ statistical language and required for VBIC simulati
on is also developed and presented.