Estimation of the effects of remote charge scattering on electron mobilityof n-MOSFET's with ultrathin gate oxides

The effects of remote charge scattering on the electron mobility of n-MOSFE T's with ultrathin gate oxides from 1.5 nm to 3.2 nm have been estimated, B y calculating the scattering rate of the two-dimensional (2-D) electron gas at the Si/silicon dioxide interface due to the ionized doping impurities a t the poly-Si/silicon dioxide interface, the remote charge scattering mobil ity has been calculated. Electron mobility measured from the n-MOSFET's wit h ultrathin gate oxides has been used to extract several known mobility com ponents. These mobility components have been compared to the calculated rem ote charge scattering mobility. From these comparisons, it is clear that th e overall electron mobility is not severely degraded by remote charge scatt ering for the oxide thickness studied.