Device related parameters of GaSb are characterized and simulated based on
measurements of photovoltaic cells. Internal quantum efficiencies are simul
ated to quantify the contributions from band-gap narrowing and the main rec
ombination mechanisms, such as Auger, radiative, and Shockley-Read-Hall rec
ombination, A detailed study of the recombination mechanisms values shows d
ifferences between literature data and data derived from comparison of simu
lation results with measurements on real devices. A new evaluation of these
data is given. The evaluation of the band-gap narrowing in n-GaSb is perfo
rmed by comparison of measurements and simulations of the injection compone
nt of the dark current l(01) and open-circuit voltage. Far the first time,
a range of possible values for the intrinsic carrier concentration of GaSb
at room temperature is given, based on theoretical calculations, and proven
with comparison of measured I-01 and open-circuit voltages of GaSb photovo
ltaic devices.