High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric

This paper reports the high temperature (up to 450 degrees C) characteristi cs of 6H-SiC MIS capacitors made with SiO2/SiN/SiO2 (ONO) stack gate dielec tric deposited by the jet vapor deposition (JVD) process. This ONO stack ga te dielectric provides: 1) high immunity to instability caused by mobile io ns, 2) orders of magnitude lower gate leakage current than its thermal oxid e counterpart, 3) the highest dielectric breakdown strength ever reported f or SIC MIS structures at elevated temperatures (i.e., greater than 12 MV/cm at 450 degrees C), 4) relatively symmetric p- and n-type C-V and current-v oltage (I-V) characteristics, due to low densities of dielectric charge as well as interface traps in both types of samples, and (5) over ten years of projected lifetime for both types operating at an electric field of 3 MV/c m at 350 degrees C. The key factors contributing to such success are briefl y discussed.