A p-channel MOS synapse transistor with self-convergent memory writes

Authors
Citation
C. Diorio, A p-channel MOS synapse transistor with self-convergent memory writes, IEEE DEVICE, 47(2), 2000, pp. 464-472
Citations number
20
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
2
Year of publication
2000
Pages
464 - 472
Database
ISI
SICI code
0018-9383(200002)47:2<464:APMSTW>2.0.ZU;2-J
Abstract
We have developed a p-channel floating-gate-MOS synapse transistor for sili con-learning applications, The synapse stores a nonvolatile analog weight b y means of charge on its floating gate, modifies this weight bidirectionall y using electron tunneling and hot-electron injection, and allows simultane ous memory reading and writing. The synapse also learns locally-its weight updates depend only on the applied terminal voltages and on the stored weig ht, We fabricated an array of synapses that computed both the array output, and the weight updates, in parallel. We also demonstrated a self-convergen t write procedure that permitted accurate initialization of the synapse wei ghts. Our pFET synapse is small, and is operated at subthreshold current le vels; it will permit the development of dense, low-power, silicon learning systems.