A plastic package GaAs MESFET 5.8-GHz receiver front-end with on-chip matching for ETC system

A plastic package GaAs MESFET receiver front-end monolithic microwave integ rated circuit operating at 5.8 GHz is presented in this paper. It has a two -stage low-noise amplifier followed by a dual-gate mixer. Operating at 3 V and 8.3 mA, a conversion gain of 20.4 dB, noise figure of 4.1 dB, and high port-to-port isolations have been achieved. Total chip size of 1.0 X 0.9 mm (2) has been achieved through on-chip matching for both RF and local-oscill ator ports and the use of simple two-element matching networks for all inte rstage matching. The 3-dB bandwidth of conversion gain is 1 GHz.