Characterization of the crystallization behaviors in the PbTiO3 thin filmson Si substrates by an infrared spectroscopy technique

Citation
Xj. Meng et al., Characterization of the crystallization behaviors in the PbTiO3 thin filmson Si substrates by an infrared spectroscopy technique, INFR PHYS T, 41(1), 2000, pp. 47-50
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
INFRARED PHYSICS & TECHNOLOGY
ISSN journal
13504495 → ACNP
Volume
41
Issue
1
Year of publication
2000
Pages
47 - 50
Database
ISI
SICI code
1350-4495(200002)41:1<47:COTCBI>2.0.ZU;2-A
Abstract
PbTiO3 thin films on silicon substrates derived from a modified sol-gel tec hnique are characterized by IR reflectance spectroscopy for the first time. Seven infrared (IR) reflectance peaks modes have been observed in the crys tallized perovskite PbTiO3 thin films and are assigned to the corresponding phonon modes. Comparisons between the LR reflectance spectra of PbTiO3 thi n films obtained by different annealing processes, i.e., rapid thermal anne aling (RTA) and conventional thermal annealing (CTA), have also been carrie d out. It is observed that the frequencies of most peaks in the RTA-derived PbTiO3 films are lower than that in the CTA-derived films. (C) 2000 Elsevi er Science B.V. All rights reserved.