An infrared sensitive negative-differential-resistance device for high-temperature application

Authors
Jiang, YF Li, SY Liu, S Ma, ZH
Citation
Yf. Jiang et al., An infrared sensitive negative-differential-resistance device for high-temperature application, INT J INFRA, 21(2), 2000, pp. 255-260
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
01959271 → ACNP
Volume
21
Issue
2
Year of publication
2000
Pages
255 - 260
Database
ISI
SICI code
0195-9271(200002)21:2<255:AISNDF>2.0.ZU;2-P
Abstract
In this paper, a novel infrared sensitive negative-differential-resistance( NDR) device has been achieved. This device can be operated at 100 degrees C , indicating its excellent characteristic. Under-daylight, the device exhib its a negative-differential-resistance property and the peak-to-valley curr ent ratio(PVCR) is still prominent at 100 degrees C. When-the device's forw ard bias is fixed, device's current changes with infrared light power. So, it is sensitive to infrared light. Its operational mechanism is interpreted in detail, too.