Molecular-beam epitaxy of narrow-band CdxHg1-xTe. Equipment and technology

Authors
Sidorov, YG Dvoretskii, SA Mikhailov, NN Yakushev, MV Varavin, VS Antsiferov, AP
Citation
Yg. Sidorov et al., Molecular-beam epitaxy of narrow-band CdxHg1-xTe. Equipment and technology, J OPT TECH, 67(1), 2000, pp. 31-36
Citations number
18
Categorie Soggetti
Optics & Acoustics
Journal title
JOURNAL OF OPTICAL TECHNOLOGY
ISSN journal
10709762 → ACNP
Volume
67
Issue
1
Year of publication
2000
Pages
31 - 36
Database
ISI
SICI code
1070-9762(200001)67:1<31:MEONCE>2.0.ZU;2-Z
Abstract
The results of physicochemical investigations of the growth of heteroepitax ial HgCdTe (MCT) structures by molecular-beam epitaxy are presented. An app aratus for the semi-industrial production of epitaxial films of an MCT soli d solution is developed and fabricated. A technology for growing heteroepit axial MCT films for the fabrication of high-quality multielement IR photode tectors is developed. (C) 2000 The Optical Society of America.