Epitaxial ZnS thin films grown by single source chemical vapor deposition

Deposition and subsequent decomposition of the organometallic precursor tit le diethyldithiocarbamate Zn[S2CN(C2H5)(2)](2) has been shown to produce Zn S films. On Si(111), these firms have been seen to grow epitaxially using X -ray photoelectron diffraction (XPD) as a probe. For film thickness from si milar to 5 to 2000 Angstrom angle-dependent XPD scans, recorded for Zn 2p(3 /2) intensity as a function of polar angle theta, resulted in a consistent forward scattering peak at theta = 0 degrees which indicated that the films have preferred orientation. Detailed analysis of the relative photoelectro n intensities (Zn 2p(3/2) and S 2p) indicated that the films are of cubic s tructure and [111] oriented. This was despite the total carbon concentratio n in the bulk remaining at similar to 3 atomic %. This study demonstrates t hat the relatively simple and low-energy single-source chemical vapor depos ition growth technique can be utilized for the production of epitaxial II-V I semiconductor thin films.