Integration of Pt/Ru electrode structures by metalorganic chemical-vapor deposition on poly-Si/SiO2/Si

The electrode structures of Pt(130 nm)/Ru(80 nm) were integrated on polysil icon by metalorganic chemical-vapor deposition. It was found that the ruthe nium buffer layer plays an important role in preventing the oxidation of po lysilicon during annealing at 700 degrees C in oxygen (760 Torr). The micro structure and conductivity of the platinum bottom electrodes depended great ly on the annealing conditions of the ruthenium buffer layer. The surface m orphology and the conductivity of Pt/Ru (annealed at 700 degrees C in a vac uum) films annealed at 700 degrees C in oxygen were superior to those of Pt /Ru (annealed at 500 degrees C in a vacuum) films annealed. under the same conditions. The electrode structures suggested here may be applied to the i ntegration of ferroelectric thin films. (C) 2000 American Vacuum Society. [ S0734-211X(00)02701-3].