Compensation effect during water desorption from siloxane-based spin-on dielectric thin films

Citation
J. Proost et al., Compensation effect during water desorption from siloxane-based spin-on dielectric thin films, J VAC SCI B, 18(1), 2000, pp. 303-306
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
1
Year of publication
2000
Pages
303 - 306
Database
ISI
SICI code
1071-1023(200001/02)18:1<303:CEDWDF>2.0.ZU;2-1
Abstract
It is the aim of this report to show experimental evidence for the compensa tion effect during water desorption from siloxane-based spin-on dielectrics . A single linear relationship was obtained between the activation entropy Delta S-# and the activation enthalpy Delta H-# for the elementary water de sorption components in the degassing spectra for siloxane-based dielectric thin films. From this observation, an isokinetic temperature was derived at which all desorption rates become equal. It is argued that this temperatur e can be considered as a fundamental materials characteristic, governing th e thermal stability of the dielectric thin film. (C) 2000 American Vacuum S ociety. [S0734-211X(00)3401-6].