It is the aim of this report to show experimental evidence for the compensa
tion effect during water desorption from siloxane-based spin-on dielectrics
. A single linear relationship was obtained between the activation entropy
Delta S-# and the activation enthalpy Delta H-# for the elementary water de
sorption components in the degassing spectra for siloxane-based dielectric
thin films. From this observation, an isokinetic temperature was derived at
which all desorption rates become equal. It is argued that this temperatur
e can be considered as a fundamental materials characteristic, governing th
e thermal stability of the dielectric thin film. (C) 2000 American Vacuum S
ociety. [S0734-211X(00)3401-6].