We propose and demonstrate a multiple exposure lithographic technique with
resolution limited by processing and not by exposure wavelength. We impleme
nt this technique using binary masks and conventional illumination at lambd
a(e) = 248 nm and show that various types of patterns of dimension up to la
mbda(e)/10 can be printed. (C) 2000 American Vacuum Society. [S0734-211X(00
)03001-8].