Modeling of ultrashallow spreading resistance probe calibration curves

Accurate determination of resistivity and carrier density from spreading re sistance (SR) data depends heavily on the quality of the SR probes. This qu ality can be assessed by the shape of the calibration curve, which primaril y depends on the properties and behavior of the point contact diodes; In th is article, we demonstrate that the SR calibration curve can be simulated u sing an accurate representation of the SR equivalent circuit. This simulati on includes physical models for the point contact diodes, the traditional g eometric spreading resistance, and all parasitic resistances. Modeling of t he point contact diode is emphasized based on measurements and analysis of the full current/voltage relationships for bulk p-type material. (C) 2000 A merican Vacuum Society. [S0734-211X(00)01001-5].