Dopant dose loss at the Si-SiO2 interface

The phenomenon of dopant dose loss through trapping at the Si-SiO2 interfac e has. important consequences for metal-oxide-semiconductor device fabricat ion. It represents also a challenge to analytical techniques, since the tra pped dopants appear to exist in one or a few monolayers thickness at the in terface. In this work, we report on a complementary approach, using both el ectrical device data and accurate process modeling, as well as analytical d opant profiling with secondary ion mass spectroscopy, to investigate import ant features of the phenomenon, such as dose dependence, detrapping, and tr ansient enhanced diffusion effects. This approach enabled the development o f dose loss models suitable for design of current and future complementary metal-oxide-semiconductor technologies. (C) 2000 American Vacuum Society. [ S0734-211X(00)00501-7].