Cluster formation during annealing of ultra-low-energy boron-implanted silicon

Authors
Collart, EJH Murrell, AJ Foad, MA van den Berg, JA Zhang, S Armour, D Goldberg, RD Wang, TS Cullis, AG
Citation
Ejh. Collart et al., Cluster formation during annealing of ultra-low-energy boron-implanted silicon, J VAC SCI B, 18(1), 2000, pp. 435-439
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
1
Year of publication
2000
Pages
435 - 439
Database
ISI
SICI code
1071-1023(200001/02)18:1<435:CFDAOU>2.0.ZU;2-X
Abstract
The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boron implantations at doses of 1 x 10(15) and 5 x 10(15) cm(-2) wer e annealed for 10 s between 700 and 1100 degrees C. The evolution of the bo ron concentration profiles was monitored using secondary ion mass spectrome try. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements. (C) 2000 A merican Vacuum Society. [S0734-211X(00)01301-9].