Production of shallow ion-implanted layers using rapid electron-beam annealing under the condition of transient-enhanced outdiffusion

The effect of the transient-enhanced outdiffusion of P, As, and Sb from ion -doped silicon layers on the diffusion of the impurity into the specimen bu lk during rapid electron-beam annealing has been studied. For specimens dop ed with P+ and As+ ions, it has been established that the average coefficie nt of diffusion of the impurity into the bullet under the condition of tran sient-enhanced outdiffusion is a fraction of that in a case where no evapor ation of the impurity takes place. For specimens doped with Sb+ ions, no di ffusion of antimony into the bulk of silicon under the condition of evapora tion of the impurity has been revealed, but, on the contrary, a decrease in the depth of position of the impurity has been detected. The data obtained indicate that the evaporation of the impurity, in particular, its transien t-enhanced outdiffusion occurring early in the process of rapid thermal ann ealing, slows down the diffusion of the impurity into the bulk of silicon. The possibility of harnessing this effect for the production of supershallo w-doped layers is discussed. (C) 2000 American Vacuum Society. [S0734-211X( 00)03801-4].