Ultra-low-energy ion-implant simulation using computational-efficient molecular dynamics schemes and the local damage accumulation model

We have investigated effects of atomic dynamics for ultra-low-energy As and B ion implants using a highly efficient molecular dynamics scheme. We simu lated ion implantation by molecular dynamics simulation using the recoil io n approximation method and the local damage accumulation model proposed in the article. The Local damage accumulation probability function consists of . deposited energy in a unit cell, implant dose rare, target material, proj ectile atom, and the history of the recoil event in a cell. The results of simulations agree with the experimental results. The MDRANGE results consid ering no damage were different from the tail region. Using the local damage : accumulation model and the recoil ion approximation method, we simulated dopant two-dimensional profiles and two-dimensional damage profiles. (C) 20 00 American Vacuum Society. [S0734-211X(00)04201-3].