We have previously reported measurements of ultra-shallow boron implants in
silicon using a magnetic sector Cameca IMS-6f, and excellent depth resolut
ion and dynamic range were obtained for boron implants down to 1 keV using
O-2(+) primary beam. The appropriate impact energy of the primary beam and
incidence angle could be easily achieved for an analysis by the choice of s
everal combinations of sample and source voltages, based on calculations go
verning the penetration depth and incidence angle of the primary ion beam.
This article outlines additional low energy analysis results for boron and
arsenic implants with either oxygen or cesium low energy beams. Methods for
low energy beam alignment have been utilized to allow analysis conditions
to be reached quickly while maintaining a good beam shape, and calculations
that more accurately describe how the angle of incidence varies with the p
rimary, sample, and deflector voltages are described. (C) 2000 American Vac
uum Society. [S0734-211X(00)06101-1].