E. Napolitani et al., Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument, J VAC SCI B, 18(1), 2000, pp. 519-523
A Cameca IMS-4f secondary ion mass spectrometry instrument has been applied
to the study of the diffusion of ultralow energy B implants in crystalline
silicon. Several analyses on sub-keV B implants have been performed by usi
ng low energy O-2(+) beams both before and after thermal annealing. The lim
its and the accuracy of the technique are discussed. It is shown that a 1.5
keV beam provide he depth resolution needed to accurately characterize, be
yond the equilibrium depth (similar to 5 nm), a 500 eV B implant. This meas
urement protocol provides at the same time a significantly low detection li
mit (1X10(15) at/cm(3)) and a very fast sputter rate (25 nm/min), necessary
to characterize deep diffused profiles. Several artifacts are discussed, w
ith emphasis to these affecting the tail region of the profiles. (C) 2000 A
merican Vacuum Society. [S0734-211X(00)08201-9].