Effective channel length and base width measurements by scanning capacitance microscopy

In this article scanning capacitance measurements (SCM), carried out direct ly on device sections, are presented. Quantitative SCM have been applied to determine the channel length in an advanced power metal-oxide-semiconducto r device and the base width in a heterojunction bipolar transistor. Ion imp lantation in samples with 45 degrees-edge mask allowed us to demonstrate th e SCM capability to image the depletion region and to delineate the junctio n position. The effective channel length was determined by considering the depletion region. A channel length of less than 200 nm was determined. Meas urements on a heterojunction bipolar transistor device allowed us to image a base width of less than 180 nm. (C) 2000 American Vacuum Society. [S0734- 211X(00)01501-8].