Two-dimensional dopant profile of 0.2 mu m metal-oxide-semiconductor fieldeffect transistors

Tn this article, we report our progress in two-dimensional (2D) dopant prof iling of metal-oxide-semiconductor field effect transistor devices fabricat ed with 0.2 mu m technology by using dopant selective etching followed with atomic force microscope imaging (DSE/AFM). By comparing device simulation results based on our measurement with electrical measurement results, we ha ve found that in these small devices the depletion region can have a signif icant effect on the results of dopant concentration conversions from the se lective etching data, and the necessary correction can be found by a. prope r estimation of the depletion width. Here we discuss the factors that affec t the etching reproducibility and reliability and show our approaches to th ese challenges, Our results show Chat DSE/AFM is a useful technique far 2D dopant profiling with certain advantages if it is dealt with properly. (C) 2000 American Vacuum Society. [S0734-211X(00)01601-2].