Quantitative two-dimensional profiling of 0.35 mu m transistors with lightly doped drain structures

We report the first quantitative experimental two-dimensional (2D) dopant p rofile measurement of 0.35 mu m transistors with lightly doped drain struct ures and its comparison with theoretical simulation. Experimentally, the 2D dopant profile is determined using dopant-selective etching followed by at omic farce microscopy Imaging. These results show excellent quantitative ag reement with recent theoretical profile simulation for both n- and p-channe l metal-oxide-semiconductor transistors. (C) 2000 American Vacuum Society. [S0734-211X(00)08301-3].