High-resolution two-dimensional dopant characterization using secondary ion mass spectrometry

A quantitative two-dimensional (2D) boron dopant profiling for submicron te chnology has been demonstrated using secondary ion mass spectrometry (SIMS) . A novel test structure incorporating a moire pattern has been developed t o improve SIMS lateral resolution. This approach significantly simplifies 2 D SIMS test chip manufacturing, data acquisition, and analysis. As a result , 2D dopant profiling with a lateral resolution limited by the photomask pi xel size (10 nm) and sensitivity df; 3x10(17) cm(-3) has been realized on c ommercial equipment. 2D dopant profiles are reproducible within 10 nm. The measured profiles were compared with 2D Monte-Carlo and calibrated TSUPREM4 simulations and showed good agreement. (C) 2000 American Vacuum Society [S 0734-211X(00)01701-7].