Ion implantation damage model for B, BF2, As, P, and Si in silicone

In this article we describe a newly proposed and consistent damage model in Monte Carlo simulation for the accurate prediction of a three-dimensional as-implanted impurity profile and point defect profile induced by ion impla ntation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P, and Si self-implants over a wide energy range has been proposed for silicon-based semiconductor device technology and development. Our model shows very good agreement with secondary ion mass spectrometry d ata over a wide energy range. For damage accumulation, we have considered t he self-annealing effects by introducing our proposed nonlinear recombinati on probability function of each point defect for computational efficiency. For the damage profiles, we compared the published Rutherford backscatterin g spectrometry (RBS)/ channeling data with our results of phosphorus implan ts. Our damage model shows very reasonable agreements with the RBS/channeli ng experiments for phosphorus implants. (C) 2000 American Vacuum Society. [ S0734-211X(00)09001-6].