Monte Carlo calculations of hydrogen depth profiles in a-Si and a-Si : H

Authors
Horiki, H Koyama, A
Citation
H. Horiki et A. Koyama, Monte Carlo calculations of hydrogen depth profiles in a-Si and a-Si : H, NUCL INST B, 160(3), 2000, pp. 328-332
Citations number
18
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
160
Issue
3
Year of publication
2000
Pages
328 - 332
Database
ISI
SICI code
0168-583X(200003)160:3<328:MCCOHD>2.0.ZU;2-X
Abstract
Ranges and variances of 15-1000 eV H-atoms implanted into a-Si and a-Si:H a re calculated by using a Monte Carlo calculation program. The results for a -Si are in good agreement with those from other simulation codes of TRIM-92 , BABOUM, and TRIM-SP examined by Mayer and Eckstein. Values of ranges and variances calculated for a-Si:H are compared with those for a-Si and the im plantation dose effect is shortly discussed. (C) 2000 Elsevier Science B.V. All rights reserved.